NANOSHEET TRANSISTOR
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United States of America
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Issued Date -
Dec 12, 2024
app pub date -
Dec 27, 2023
filing date -
Dec 27, 2023
priority date (Note) -
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Abstract
Inner and outer spacers for nanosheet transistors are formed using techniques that improve junction uniformity. One nanosheet transistor device includes outer spacers and an interlevel dielectric layer liner made from the same material. A second nanosheet transistor device includes outer spacers, inner spacers and an interlevel dielectric layer liner that are all made from the same material.
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