Importance

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Abstract

A metal insulator metal capacitor (MIM capacitor) between adjacent stacked nanosheet FETs, each include a first nanosheet stack including alternating layers of a first work function metal and a semiconductor channel material vertically aligned and stacked one on top of another and a second nanosheet stack including alternating layers of a second work function metal and the semiconductor channel material vertically aligned and stacked one on top of another, the second nanosheet stack on the first nanosheet stack. Forming adjacent stacked nanosheet FETs, each include a first nanosheet stack and a second nanosheet stack, the second nanosheet stack on the first nanosheet stack, and forming a MIM capacitor between adjacent stacked nanosheet field effect transistors.

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First Claim