CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHOD FOR PREVENTING POLISHING PAD GROOVE CLOGGING

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United States of America

APP PUB NO 20250019567A1
SERIAL NO

18351031

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Abstract

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An aqueous based chemical mechanical polishing composition for polishing a semiconductor substrate includes an abrasive having bimodal distributed colloidal silica particles which include elongated colloidal silica particles, polyvinyl alcohol 80% hydrolyzed to less than or equal to 90% hydrolyzed, an electrolyte and a pH greater than 7, and a method of polishing the semiconductor substrate to planarize the substrate. The aqueous based chemical mechanical polishing composition and method inhibits polishing pad groove clogging during chemical mechanical polishing of the semiconductor substrates.

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Patent Owner(s)

Patent OwnerAddress
DUPONT ELECTRONIC MATERIALS HOLDING INC451 BELLEVUE ROAD NEWARK DE 19713

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Yi Newark, US 236 1263
Mosley, David Media, US 30 127

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