SUBSTRATE WITH DIELECTRIC THIN FILM, OPTICAL WAVEGUIDE ELEMENT, AND OPTICAL MODULATION ELEMENT
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jan 23, 2025
app pub date -
Jun 7, 2024
filing date -
Jun 7, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A substrate with a dielectric thin film 1 includes a single-crystal substrate, a stress relaxation layer, and a dielectric thin film, in which the stress relaxation layer is made of a c-axis-oriented epitaxial film, and includes a twin crystal structure of LiNbO3 including a first and a second crystal existing at a position obtained by rotating the first crystal 180° about a c-axis and a LiNb3O8 phase, the dielectric thin film is made of a lithium niobate film which is a c-axis-oriented epitaxial film, has the twin crystal structure of LiNbO3, has a film thickness of 0.5 μm to 2 μm, and has a maximum domain width greater than a maximum domain width of the stress relaxation layer, and a percentage of a film thickness of the stress relaxation layer to the film thickness of the dielectric thin film is 5% to 25%.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully