METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE, AND RELEASING AND DISSOLVING COMPOSITION

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United States of America

APP PUB NO 20250043216A1
SERIAL NO

18692622

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Abstract

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A method for cleaning a semiconductor substrate includes releasing and dissolving an adhesive layer formed on a semiconductor substrate using a releasing and dissolving composition, in which the releasing and dissolving composition contains: a component [I]: a quaternary ammonium salt; a component [II]: an amide-based solvent; and a component [III]: a solvent represented by the following Formula (L), where L represents a substituent substituted on a benzene ring and each independently represents an alkyl group having 1 to 4 carbon atoms, and k represents the number of L and is an integer of 0 to 5.

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Patent Owner(s)

  • NISSAN CHEMICAL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
OKUNO, Takahisa Toyama, JP 37 6
SHINJO, Tetsuya Toyama, JP 72 321
YAGYU, Masafumi Toyama, JP 4 0

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