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Abstract

Example embodiments relate to methods for evaluating the bending stiffness of high aspect ratio nanosized structures. One example method for evaluating a bending stiffness of high aspect ratio nanosized structures arranged in a plurality of test patterns produced by lithography and etching in a respective plurality of different areas of a semiconductor substrate, where each test pattern includes a regular array of the high aspect ratio nanosized structures, includes scanning the regular arrays in the plurality of test patterns by an electron beam produced according to a same set of beam conditions for each array. The method also includes deriving images of the regular arrays in the respective test patterns by electron beam microscopy. Additionally, the method includes determining from each of the images an e-beam induced collapse rate representative of a percentage of structures in each array that have collapsed under an influence of the electron beam scanning.

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