CHEMICAL MECHANICAL POLISHING SOLUTION AND USAGE METHOD THEREOF
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United States of America
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Feb 20, 2025
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Dec 23, 2022
filing date -
Dec 23, 2022
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Abstract
The present disclosure provides a chemical mechanical polishing solution comprising cerium oxide particles, an anionic compound, a cationic compound, an inhibitor, and a pH regulator, wherein the inhibitor is a non-ionic polymeric compound; The polishing selectivity ratio of the chemical mechanical polishing solution for the insulation film/polycrystalline silicon is greater than 100. The chemical mechanical polishing solution of the present invention can effectively maintain a high polishing selectivity ratio of the insulation layer to the stop layer, where the stop layer is a polycrystalline silicon stop layer.
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