ADAPTIVE WRITE SCHEME FOR MEMORY DEVICES

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250061926A1
SERIAL NO

18235739

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Memory driver circuitry for driving a memory cell or cells of a memory device includes first driver path circuitry and selection circuitry. The first driver path circuitry includes driver circuitry that outputs a first signal and selection circuitry that receives the first signal and a second signal, and outputs a first selected signal. The first selected signal is a selected one of the first signal and the second signal. The selection circuitry of the memory driver circuitry receives a third signal and a fourth signal, and outputs a bias voltage signal to header circuitry of a memory cell. The bias voltage signal is a selected one of the third signal and the fourth signal. The third signal corresponds to the first selected signal.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KANDALA, Anil Kumar Hyderabad, IN 13 32
PULIPATI, Narendra Kumar Hyderabad, IN 9 10
SARASWATULA, Sree Rama Krishna Chaithnya Hyderabad, IN 5 1
YACHARENI, Santosh Hyderabad, IN 37 104
ZHOU, Shidong Hyderabad, IN 22 79

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