PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

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United States of America

APP PUB NO 20250062130A1
SERIAL NO

18935294

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A plasma processing method according to the present disclosure includes a preparing a substrate having a first etching film and a mask on the first etching film, the mask including a metal-containing film; and generating plasma in a chamber with a processing gas including one or both of a chlorine-containing gas and a bromine-containing gas to etch the first etching film.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDAKASAKA BIZ TOWER 3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
TAKINO, Yusuke Tokyo, JP 13 11
YONEZAWA, Takahiro Tokyo, JP 27 310

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