GATE DRIVE CIRCUIT AND POWER CONVERSION DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250079971A1
SERIAL NO

18726611

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a gate drive circuit, a first and second gate drives IC includes an INA terminal and an INB terminal to which a PWM signal is input, a gate output terminal that outputs a gate drive signal, and an OSFB terminal that outputs a feedback signal of the gate drive signal,

    and they are configured to output a gate drive signal in an ON state when the input of the INA terminal and the INB terminal is (ON, OFF). In the first gate drive IC, a first PWM signal is input to the INA terminal, and a second PWM signal is input to the INB terminal, and in the second gate drive IC, the second PWM signal is input to the INA terminal, and the first PWM signal is input to the INB terminal. The first diode includes a cathode side connected to the INB terminal of the second gate drive IC and an anode side connected to the OSFB terminal of the first gate drive IC. The second diode includes a cathode side connected to the INB terminal of the first gate drive IC and an anode side connected to the OSFB terminal of the second gate drive IC.

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Patent Owner(s)

Patent OwnerAddress
HITACHI ASTEMO LTDHITACHINAKA-SHI IBARAKI 312-8503

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IKUYAMA, Takeshi Hitachinaka-shi, Ibaraki, JP 3 0
YAHATA, Koichi Hitachinaka-shi, Ibaraki, JP 22 370

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