SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America
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Mar 6, 2025
app pub date -
Nov 21, 2024
filing date -
Nov 21, 2024
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Abstract
Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.
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