POLISHING COMPOSITION AND METHOD FOR POLISHING SUBSTRATE USING THE COMPOSITION
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United States of America
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Mar 13, 2025
app pub date -
Sep 5, 2024
filing date -
Sep 5, 2024
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Abstract
The present disclosure relates to a polishing compositions that increase a silicon oxide removal rate without impairing the stability of an abrasive. The present disclosure relates to a polishing composition comprising an abrasive, a base compound, a silicon oxide removal rate controller, and an oxidizer, wherein the abrasive is a silica abrasive with a primary particle size ranging from about 30 nm to about 70 nm and a secondary particle size ranging from about 50 nm to about 130 nm; the base compound is an inorganic base; the silicon oxide removal rate controller is a zwitterion; and the oxidizer is a peroxide.
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