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Abstract

This document describes an electro-optic modulator with an integrated memory device comprising a micro-ring resonator and the memory device comprising a ferroelectric capacitor disposed in a partial circumference of a raised ring waveguide of the micro-ring resonator. An electric field is generated between transparent electrodes of the ferroelectric capacitor when a voltage is applied between these two layers, whereby the electric filed causes a polarization state of the ferroelectric capacitor to change based on the strength of the electric field. The electric field then extends between the ferroelectric capacitor and a bottom electrode layer of the micro-ring resonator when the applied voltage is removed, causing a refractive index of a non-centrosymmetric material of the micro-ring resonator to change based on the strength of the extended electric field.

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First Claim