CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER
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United States of America
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Issued Date -
Mar 13, 2025
app pub date -
Nov 27, 2024
filing date -
Nov 27, 2024
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Abstract
In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
ASML NETHERLANDS B V | 5500 AH VELDHOVEN |
International Classification(s)

- [Classification Symbol]
- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Baek, Jonghoon | Saratoga, US | 30 | 1674 |
Dziomkina, Nina Vladimirovna | San Diego, US | 43 | 288 |
Evans, David Robert | Poway, US | 7 | 31 |
LaForge, Andrew David | Poway, US | 15 | 27 |
Ma, Yue | Escondido, US | 269 | 3729 |
Stewart,, IV John Tom | Escondido, US | 10 | 48 |
Van, Heijnsbergen Deniz | San Diego, US | 3 | 6 |
Xia, Chunguang | San Diego, US | 30 | 555 |
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