CHEMICAL MECHANICAL PLANARIZATION SLURRY PROCESSING TECHNIQUES AND SYSTEMS AND METHODS FOR POLISHING SUBSTRATE USING THE SAME

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United States of America Patent

APP PUB NO 20250101261A1
SERIAL NO

18832677

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Abstract

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A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.

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Patent Owner(s)

Patent OwnerAddress
ARACA INC2550 EAST RIVER ROAD APT 12204 TUCSON AS 85718

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CAHUE, Kiana A Joliet, US 3 0
KELEHER, Jason A Naperville, US 3 0
PHILIPOSSIAN, Ara Tucson, US 36 607
REDEKER, Fred C Livermore, US 195 5499
SAMPURNO, Yasa Tucson, US 13 54

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