POLISHING COMPOSITION
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Sep 17, 2024
filing date -
Sep 17, 2024
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Abstract
Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for copper, tantalum, and TEOS. Polishing compositions comprising silica particles (greater than 12 nm), a metal corrosion inhibitor, and a phosphate surfactant are capable of achieving Ta to TEOS selectivities of greater than 1 and low Co removal rates (e.g., less than 200 Å/min), allowing for good topography correction (e.g., reduced dishing).
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