METHOD FOR DEPOSITING A STRAIN RELAXED GRADED BUFFER LAYER OF SILICON GERMANIUM ON A SURFACE OF A SUBSTRATE
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United States of America Patent
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Mar 27, 2025
app pub date -
Dec 14, 2022
filing date -
Dec 14, 2022
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Abstract
A method deposits a strain relaxed graded buffer layer of silicon germanium on a surface of a substrate. The surface includes silicon, and the buffer layer has an increasing content of germanium up to a final content. The method includes: conducting GeCl4 and SiH2Cl2 during a first stage and a second stage over the surface of the substrate at a deposition temperature of not less than 800° C.; growing the buffer layer with a grade rate that is less than 10% Ge/μm; and growing the buffer layer with a growth rate that is not less than 0.1 μm/min during the first stage, and that is less than 0.1 μm/min during the second stage.
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