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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
SHIN-ETSU CHEMICAL CO LTD	JAPAN

International Classification(s)

• C30B:SINGLE-CRYSTAL GROWTH

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
KAWAI, Makoto	Gunma, JP	151	2348
KUBOTA, Yoshihiro	Gunma, JP	175	1781

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
3.5 Year Payment	$1600.00	$800.00	$400.00	Sep 27, 2028
7.5 Year Payment	$3600.00	$1800.00	$900.00	Sep 27, 2032
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Sep 27, 2036

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 3.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2025/0101,630

HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING SAME

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