MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20250106976A1
SERIAL NO

18974593

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
LAM RES CORPAMERICAN CALIFORNIA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Long, Maolin Santa Clara, US 82 847
Marsh, Ricky San Ramon, US 14 149
Paterson, Alex San Jose, US 113 3362
Wang, Yuhou Fremont, US 25 201

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation