POLISHING COMPOSITION, POLISHING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250109318A1
SERIAL NO

18820001

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention provides a mechanism capable of reducing a polishing removal rate of polysilicon and further reducing defects (organic residues, for example) on a surface of polysilicon after polishing.

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Patent Owner(s)

Patent OwnerAddress
FUJIMI INCORPORATEDKIYOSU-SHI AICHI 452-8502

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ITO, Daiki Kiyosu-shi, JP 28 50

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