POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Sep 20, 2024
filing date -
Sep 20, 2024
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Abstract
There is provided a polishing composition capable of improving a polishing removal rate of a certain film type and suppressing a polishing removal rate of another certain film type, that is, capable of controlling a so-called polishing selection ratio, in an object to be polished containing two or more different film types. The present invention relates to a polishing composition containing abrasive grains, an acid, a polishing inhibitor, and an oxidizing agent, in which the abrasive grains have a positive zeta potential, the acid is an organic acid, the polishing inhibitor contains a nonionic surfactant, the oxidizing agent is hydrogen peroxide, and a pH of the polishing composition is 2 or more and 4 or less.
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