MANUFACTURING METHOD FOR SINGLE-CRYSTAL SILICON ROD AND SINGLE-CRYSTAL FURNACE
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Apr 3, 2025
app pub date -
Dec 22, 2023
filing date -
Dec 22, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A manufacturing method for a single-crystal silicon rod and a single-crystal furnace. The single-crystal silicon rod is pulled through a single-crystal furnace, and a crucible of the single-crystal furnace has a depth ranging from 680 mm to 800 mm. The manufacturing method for a single-crystal silicon rod includes: initially charging a silicon material to the crucible, wherein a contact area between the silicon material in the crucible and the crucible is a, a contact area between a liquid level of the silicon material in the crucible and the outside is b, and 1.2≤a/b≤3.7.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully