METHOD AND APPARATUS FOR DIAMETER MEASUREMENT OF CZOCHRALSKI MONOCRYSTALLINE SILICON, AND DEVICE FOR GROWING CZOCHRALSKI MONOCRYSTALLINE SILICON

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United States of America

APP PUB NO 20250109521A1
SERIAL NO

18895304

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Abstract

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The present application provides a method and an apparatus for measuring ingot diameter, and a device for growing the ingot. The method comprises controlling a first calibration light source and a second calibration light source to emit light; obtaining coordinates of the calibration light sources; obtaining a diameter measurement coefficient based on the coordinates; obtaining diameter coordinates of two ends of the ingot diameter; and obtaining a measured value of the diameter based on the diameter coordinates and the diameter measurement coefficient. Accordingly, the measurement error of the ingot diameter can be reduced, and the accuracy of ingot diameter control during the growth process can be improved, thereby the production efficiency of Czochralski silicon ingot can be increased.

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Patent Owner(s)

Patent OwnerAddress
ZING SEMICONDUCTOR CORPORATIONNO 1000 YUNSHUI RD NICHENG TOWN PUDONG NEW AREA SHANGHAI 201306

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Kwanghun Shanghai, CN 4 20
LI, Jiawei Shanghai, CN 63 100
LI, Yinfeng Shanghai, CN 2 0
ZHAO, Xuliang Shanghai, CN 7 0

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