GROWTH DEVICE OF SILICON CARBIDE SINGLE CRYSTAL AND GROWTH METHOD
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Dec 12, 2024
filing date -
Dec 12, 2024
priority date (Note) -
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status (Latency Note)
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Abstract
A crystal growth device and a crystal growth method of a silicon carbide single crystal are provided. The growth device includes a crucible portion including first and second crucible portions coaxially provided; and a heating portion including first, second, and third heating portions. A seed crystal accommodation portion is provided in the middle of a top of the first crucible portion. The second crucible portion is provided with a cavity as a raw material accommodation portion. The first crucible portion's outer diameter is smaller than the second crucible portion's. A concavity recessed towards the first crucible portion is provided in the middle of a bottom of the second crucible portion. The first, second, and third heating portions are circumferentially provided in the concavity, the second crucible portion, and outside the first crucible portion respectively. The third heating portion's inner diameter is smaller than the second crucible portion's outer diameter.
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