HIGH-QUALITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Dec 5, 2024
filing date -
Dec 5, 2024
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Abstract
A high-quality SiC crystal, a crystal bar, a substrate, a preparation method, and a semiconductor device are provided. The SiC crystal contains a facet region and a non-facet region; and the facet region is located on an outer circumference of the SiC crystal, a distance between an edge of the facet region away from the outer circumference and the outer circumference does not exceed 3% of a diameter of the SiC crystal, and the SiC crystal is obtained by adopting a PVT method through direct growth without subsequent processing. In a subsequent processing process of the crystal, the facet region is eliminated, and the situation that the entire crystal bar and a wafer and substrate processed accordingly have no facet region is implemented with a low cutting loss rate.
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