SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
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United States of America
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Apr 3, 2025
app pub date -
Dec 13, 2024
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Dec 13, 2024
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Abstract
A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×1014 cm−3 at any position in the plane of the epitaxial layer.
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