METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
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United States of America
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Apr 3, 2025
app pub date -
Sep 27, 2024
filing date -
Sep 27, 2024
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Abstract
A method, comprising supporting a substrate within a chamber of a semiconductor processing system, wherein the substrate comprises a feature including a surface having at least two first regions comprising silicon in an Si(110) crystal orientation and at least one second region comprising silicon in a non-Si(110) crystal orientation, wherein the at least one second region is disposed between the first regions, epitaxially growing a silicon-containing material on the at least two first regions in a Si(100) crystal orientation preferentially to the Si(110) crystal orientation and extending the silicon-containing material over the second region.
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