LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS
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United States of America
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Apr 3, 2025
app pub date -
Dec 20, 2023
filing date -
Dec 20, 2023
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Abstract
Disclosed herein are methods for passivating SiC substrate defects using a low-energy treatment. In some embodiments, a method may include providing a silicon carbide (SIC) substrate, treating the SiC substrate using an ion implant or a plasma doping process, forming a first epitaxial layer over an upper surface of the SiC substrate after the SiC substrate is treated, and forming a second epitaxial layer over the first epitaxial layer.
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