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Abstract

Disclosed herein are microelectronic assemblies and related devices and methods. In some embodiments, a microelectronic assembly may include a glass layer having a surface, the glass layer including conductive through-glass vias (TGVs); and a substrate layer on the surface of the glass layer, the substrate layer including a dielectric material, wherein the dielectric material includes an epoxy having thermal isomeric linkages, non-thermal isomeric linkages, and non-thermal isomeric epoxy monomers, and the thermal isomeric linkages including a cis-dibenzocyclooctane (DBCO) moiety or a tetra derivative DBCO moiety. In some embodiments, the dielectric material includes an epoxy having thermal isomeric epoxy monomers including a cis-DBCO moiety or a tetra derivative DBCO moiety, non-thermal isomeric epoxy monomers, and non-thermal isomeric linkages. In some embodiments, the dielectric material includes a bismaleimide resin or a polyimide resin having non-thermal isomeric monomers and thermal isomeric monomers including a cis-DBCO moiety or a tetra derivative DBCO moiety.

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First Claim