POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND POLISHING METHOD OF SUBSTRATE USING THE SAME
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United States of America
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Apr 10, 2025
app pub date -
Sep 30, 2024
filing date -
Sep 30, 2024
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Abstract
A polishing composition for a semiconductor process includes abrasive particles and a surfactant. A volume of foam measured immediately after stirring 3L of the polishing composition at 25° C. at a speed of 1,000 rpm for 30 minutes and letting it stand for 10 minutes is 50 mL or less. When applied to a Chemical Mechanical Planarization (CMP) process, this composition improves polishing process convenience and provides a polished surface with a reduced frequency of defects.
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