POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD

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United States of America

APP PUB NO 20250115795A1
SERIAL NO

18294839

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Abstract

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A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes (A) a 4-pyrone-based compound represented by General Formula (1) below, and (B1) a compound of which a 1 mM aqueous solution has a pH of 3.7 or more or (B2) a cyclic compound having at least one functional group selected from the group consisting of a carboxy group, a carboxylate group, an amino group, and a hydroxy group. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, and the additive includes a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.

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Patent Owner(s)

Patent OwnerAddress
RESONAC CORPORATION9-1 HIGASHI-SHIMBASHI 1-CHOME MINATO-KU TOKYO 1057325 JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ICHIGE, Yasuhiro Tokyo, JP 4 1
IWANO, Tomohiro Tokyo, JP 56 332
KANNO, Masahiro Tokyo, JP 26 185
KOBAYASHI, Shingo Tokyo, JP 48 82
KURATA, Yasushi Tokyo, JP 64 744
MINAMI, Hisataka Tokyo, JP 28 207
OTSUKA, Yuya Tokyo, JP 12 12
OUCHI, Mayumi Tokyo, JP 2 2
WU, Jenna Tokyo, JP 2 0

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