HIGH-UNIFORMITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Dec 3, 2024
filing date -
Dec 3, 2024
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Abstract
A high-uniformity SiC crystal, a crystal bar, a substrate and a semiconductor device are provided. The SiC crystal is obtained by direct growth through a PVT method without subsequent machining, and includes a facet region and a non-facet region. The facet region is located on an outer-circumference end face of the SiC crystal. A doping concentration change rate of the facet region is 1.5 times or above that of the non-facet region; and/or a carrier concentration change rate of the facet region is 5 times or above that of the non-facet region.
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