SiC EPITAXIAL WAFER

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250116033A1
SERIAL NO

18987002

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Abstract

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A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.

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Patent Owner(s)

Patent OwnerAddress
RESONAC CORPORATIONTOKYO 105-7325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kindaichi, Rimpei Tokyo, JP 15 5
SUO, Hiromasa Toyota, JP 18 11
Yamashita, Tamotsu Tokyo, JP 20 194

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