RESIST COMPOSITION FOR PHOTOLITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
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United States of America
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Apr 10, 2025
app pub date -
Sep 16, 2024
filing date -
Sep 16, 2024
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Abstract
Provided are a resist composition for photolithography and a method for manufacturing a semiconductor device using the same. The resist composition includes a metal phthalocyanine compound in which an aromatic functional group is introduced. The aromatic functional group has a substituent selected among a vinyl group, a halogenated alkyl group of 1 to 20 carbon atoms, a halogenated alkyl ether halogenated alkyl group of 2 to 20 carbon atoms, a halogenated alkyl ether halogenated alkylene ether halogenated alkyl group of 3 to 20 carbon atoms, and a halogenated aryl group of 6 to 20 carbon atoms.
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