THIOL-CONTAINING PHOTORESIST COMPOSITIONS FOR EXTREME ULTRAVIOLET LITHOGRAPHY
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Mar 11, 2024
filing date -
Mar 11, 2024
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Abstract
A method for manufacturing a semiconductor device includes forming a photoresist layer from a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound, a thiol-containing polymer comprising an aryl group and an acid labile group. The thiol group can crosslink the polymer via oxidative disulfide formation and/or thiol-ene/yne “click” reaction.
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