MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR SUBSTRATE, AND CONTROL DEVICE

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United States of America

APP PUB NO 20250118554A1
SERIAL NO

18832370

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Abstract

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A manufacturing method of a semiconductor substrate includes a step of growing a nitride semiconductor portion from an upper surface of a base substrate exposed in an opening portion of a mask, a step of irradiating a mask portion and the nitride semiconductor portion being grown with first light having a wavelength absorbed by the nitride semiconductor portion at a growth temperature, a step of receiving second light from a semiconductor substrate, and a step of transitioning a growth condition of the nitride semiconductor portion from a first condition to a second condition.

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Patent Owner(s)

Patent OwnerAddress
KYOCERA CORPORATIONKYOTO-SHI KYOTO-FU 612-8501

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AOKI, Yuta Kyoto-shi, JP 18 15
KAMIKAWA, Takeshi Kyoto-shi, JP 124 1125
KOBAYASHI, Toshihiro Kyoto-shi, JP 122 1534
YOSHIKAWA, Hiromichi Kyoto-shi, JP 93 522

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