In situ method of preparing modified titanium dioxide photoactive electrodes
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United States of America Patent
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Jan 1, 1980
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N/A
app pub date -
Jun 22, 1978
filing date -
Jun 22, 1978
priority date (Note) -
Expired
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Abstract
A method of preparing doped or modified polycrystalline p- or n-type titanium dioxide semiconductor electrodes utilizable in photoassisted oxidation reactions or photoelectrochemical cells is provided. The method comprises the steps of (1) applying to a titanium substrate a thin film of one or more oxide of metals selected from the group consisting of aluminum and the d-electron transition metals other than titanium, and (2) heating the coated titanium body in an oxygen-containing atmosphere at an elevated temperature, preferably below about 800.degree. C., to sinter the coating to the titanium substrate. The sintering step produces on the titanium substrate a thin photoactive film of titanium dioxide containing a uniform concentration gradient of the previously-applied modifying oxide.
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