Method for etching silicon and a residue and oxidation resistant etchant therefor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 5, 1980
Grant Date -
N/A
app pub date -
Oct 11, 1978
filing date -
Oct 11, 1978
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
There are provided quaternary etchants comprising ethylenediamine, pyrocatechol, water and a diazine as catalyst for the etching of polycrystalline or single crystal silicon over a wide temperature and etch rate range. The etchants provide residue free dissolution, and have etch rates which are essentially unchanged when exposed to oxygen. The etch rate of the etchants can be modulated by the change in concentrations of water and/or pyrocatechol. There is also provided a method for etching polycrystalline or single crystal silicon using the etchants of this invention.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully