Optically measuring the carrier concentration in a semiconductor
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United States of America Patent
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Feb 12, 1980
Grant Date -
N/A
app pub date -
Aug 30, 1978
filing date -
Aug 30, 1978
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of optically measuring the concentration of carriers in a doped region of a semiconductor wafer includes the step of selectively introducing conductivity modifiers into both the wafer and a test substrate simultaneously to form respectively the doped region in the wafer and a diffraction grating pattern in the substrate including periodically-spaced doped strips. The diffraction grating pattern is exposed to a beam of monochromatic light, and the intensity of one of the diffracted beams is measured, whereby the magnitude thereof is a measure of the carrier concentration in the doped region.
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