Trim structure for integrated capacitors
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United States of America Patent
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Feb 26, 1980
Grant Date -
N/A
app pub date -
Feb 15, 1978
filing date -
Feb 15, 1978
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A capacitor suitable for integration into a monolithic integrated circuit is fabricated in two parallel connected sections. One section, using a thin oxide, constitutes most of the capacitance. A second section fabricated on a thick oxide constitutes a smaller capacitance per unit area but can be laser trimmed to provide a precise capacitance without damage to the integrated circuit. The trimmable section is desirably made using a conductive electrode material that is readily removed with laser energy.
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