AC silicon PN junction photodiode light-valve substrate
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United States of America Patent
Stats
-
Mar 4, 1980
Grant Date -
N/A
app pub date -
Dec 28, 1977
filing date -
Dec 28, 1977
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a PIN photodiode structure. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response an capable of operating over a wide frequency range. A PIN photodiode structure is provided on one side of the substrate next to the MOS capacitor to deplete the substrate of its mobile charge carriers during a portion of the AC cycle and to collect the electric field-guided signal representing charge carriers that are generated or introduced into the substrate by an input mechanism. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.
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- Non-US Classification not provided for expired patents
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