Growth of synthetic diamonds
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United States of America Patent
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Mar 4, 1980
Issued Date -
N/A
app pub date -
Feb 17, 1978
filing date -
Jun 7, 1973
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of growing a diamond crystal which comprises bombarding the diamond with a flux of carbon ions of sufficient energy to penetrate the diamond crystal and cause crystal growth which is at least predominantly internal, the temperature of the crystal being at least 400.degree. C. and less than the graphitisation temperature, such that the diamond crystal structure is maintained during growth.
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