Method for making semiconductor structure
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United States of America Patent
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-
Mar 18, 1980
Issued Date -
N/A
app pub date -
Jan 27, 1970
filing date -
Dec 16, 1963
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Method for making a semiconductor structure having isolated islands of semiconductor material from a semiconductor body by forming a first layer of insulating material on a surface of the body having a first support structure upon the layer of insulating material and then forming grooves in the semiconductor body which extend to the layer of insulating material formed from the semiconductor body. A second layer of insulating material is then formed on the exposed surfaces of the islands. A second support structure is then formed on the second layer of insulating material. Thereafter, the first support structure is removed and circuit devices are fabricated in the isolated islands.
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