Higher power semiconductor radiating mirror laser

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 4196402
SERIAL NO

05772325

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Radiating mirror lasers in which a semiconductor active element containing an appropriately fabricated heterostructure configuration is formed as one end mirror of a two-mirror resonant cavity. The active element is fabricated from an alloy semiconductor compound such a lead salt alloy, the bandgap of which may be varied by varying the relative composition of its constituents. By properly selecting the compound and its composition, lasers may be made for operation at wavelengths that span the ultraviolet, visible and infrared portions of the spectrum. The lasers combine the inherently high power characteristics of a radiating mirror structure with a wide spectral coverage. Arrangements are disclosed for increasing power efficiencies, for tuning the operating wavelength over a wide range and for otherwise improving the utility of the lasers.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • LASER PHOTONICS, INC.;LASER ANALYTICS, INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Butler, Jack F Lexington, MA 12 559
Nill, Kenneth W Lexington, MA 9 448

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation