Semiconductor controlled rectifier having gate grid dividing surrounding zone into two different impurity concentration sections
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United States of America Patent
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Apr 15, 1980
Issued Date -
N/A
app pub date -
Apr 27, 1978
filing date -
Jan 27, 1976
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor controlled rectifier comprises a semiconductor substrate consisting of a first layer having a first conductivity type, a second layer having a second conductivity type and disposed adjacent to the first layer, and a plurality of base regions having the first conductivity type and a higher impurity concentration than the second layer and disposed at predetermined distances from one another within the second layer in at least one direction; a pair of electrodes are kept respectively in contact with the surfaces of the first and the second layer; and a control electrode is kept in contact with the respective base regions.
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