Surfacing process for the stabilization of semiconductor bodies employing glass containing quartz passivating layer
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United States of America Patent
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May 13, 1980
Grant Date -
N/A
app pub date -
Aug 25, 1978
filing date -
Sep 3, 1977
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a surfacing process for the stabilization of semiconductor wafers in which a glass coating is provided on the surface of the semiconductor at least in the region where a pn-junction thereof extends to the surface, the glass coating is provided by directly forming on the surface of the semiconductor a layer of the oxide of the semiconductor material, applying to the semiconductor oxide layer, by melting, a base layer composed of a common glass having a thermal coefficient of expansion matched to that of the semiconductor material, and applying to the base layer a terminating layer of a glass which has a thermal coefficient of expansion lower than that of the semiconductor material, by melting such glass at a temperature in a higher temperature range adjacent that required for melting the glass of the base layer.
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