Optical testing of a semiconductor
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United States of America Patent
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-
Jul 8, 1980
Grant Date -
N/A
app pub date -
Oct 3, 1978
filing date -
Oct 3, 1978
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of optically testing electrical parameters of a surface of a semiconductor including carrier mobility and recombination time is disclosed which includes the step of irradiating the surface with a first beam of monochromatic light having a wavelength less than the wavelength corresponding to the band-gap energy of the semiconductor, resulting in the excitation of electrons and holes at the semiconductor surface. The surface is simultaneously irradiated with a second beam of monochromatic light having a wavelength larger than the wavelength corresponding to the band-gap energy of the semiconductor, whereby part of the second beam is reflected from the surface. The intensity of this reflected beam is measured and the magnitude thereof is a measure of the carrier mobility and recombination time at the semiconductor surface.
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