Silicon-semiconductor-type thermal head
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United States of America Patent
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Jul 15, 1980
Grant Date -
N/A
app pub date -
Jul 21, 1977
filing date -
Jul 21, 1977
priority date (Note) -
Expired
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Abstract
A silicon-semiconductor type thermal head comprising a substrate of .alpha.-alumina ceramic of single crystalline sapphire a silicon layer of high electrical resistance formed on the upper surface of the substrate and exothermic dots of low electrical resistance silicon integrally formed on the high resistance silicon layer. The silicon semiconductor type thermal head is formed by forming a substrate of .alpha.-alumina ceramic of single crystalline and sapphire, forming a high resistance layer of silicon on the .alpha.-alumina ceramic, forming a layer of low resistance silicon on the high resistance layer of silicon and selectively etching the low and high resistance silicon layers to produce exothermic dots of low resistance silicon, separated from the substrate by high resistance silicon.
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