Electron beam accessed read-write-erase random access memory
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United States of America Patent
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Jul 15, 1980
Issued Date -
N/A
app pub date -
Jan 15, 1979
filing date -
Jan 15, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An electron beam storage device is disclosed. A beam impinges on a target. The target stores data and it can be read as needed. The target is made of multiple layers, from the top, a first layer of thin conductive metal, and a semiconductor joined to it to define a Schottky diode. The beam liberates ionized pairs in the semiconductor. This is joined to an adjacent layer of dielectric and there is another layer of dielectric. The charge in the semiconductor causes tunneling across the first dielectric into the second where it is held. A bottom layer of metal serves as a gate and terminal for bias voltages. The beam is directed to selected X-Y locations to store data, and read in the same manner.
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