Method for making a semiconductor device

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United States of America Patent

PATENT NO 4219379
SERIAL NO

05945362

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Abstract

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A method for making a semiconductor device is described in which polycrystalline silicon is vacuum deposited and then converted to silicon dioxide thereby providing a number of advantages over direct deposition of silicon dioxide. The method has particular applicability to isoplanar MOSFET integrated circuit manufacturing.

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Patent Owner(s)

  • MOSTEK CORPORATION, 1215 WEST CROSBY ROAD, CARROLLTON, TX. 75006, A DE CORP.;SGS-THOMSON MICROELECTRONICS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Athanas, Terry G Lewisville, TX 1 16

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